NDLI: Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing

Content Provider	IEEE Xplore Digital Library
Author	Winokur, P. S. Sexton, F. W. Schwank, J. R. Fleetwood, D. M. Dressendorfer, P. V. Wrobel, T. F. Turpin, D. C.
Copyright Year	1963
Abstract	A series of experiments covering a wide range of dose rate, bias, and annealing conditions has been performed on CMOS test transistors and 2K SRAMs. These experiments, on both hardened and commercial technologies, were designed to address hardness assurance issues associated with total-dose laboratory testing. It is demonstrated that failure dose can be a complicated function of dose rate, and that a peak in the failure-dose versus dose-rate curve generally results when there is a change in failure mode. If only one failure mode exists, then the failure-dose versus doserate curve is monotonic. Implications of proposed changes in MIL-STD-883C, Method 1019.2 are examined in light of their impact on hardness assurance. Our findings support the proposed changes of (1) keeping the time between irradiation and test less than 1 hour and (2) of a more restricted range of dose rate, i.e., 100 to 300 rad(Si)/ s. In addition, it is recommended that zero volt bias be maintained on CMOS devices between irradiation and test. Finally, techniques are presented for relating total-dose hardness as measured in the laboratory to total-dose hardness in real-world space and weapon environments.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1343
Ending Page	1351
Page Count	9
File Size	1907134
File Format	PDF
ISSN	00189499
Volume Number	33
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Laboratories Circuit testing CMOS technology Integrated circuit measurements Time measurement Performance evaluation Space technology Electric variables measurement Extraterrestrial measurements
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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