NDLI: The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices

Content Provider	IEEE Xplore Digital Library
Author	Stanley, T. Neamen, D. Dressendorfer, P. Schwank, J. Winokur, P. Ackermann, M. Jungling, K. Hawkins, C. Grannemann, W.
Copyright Year	1963
Abstract	Both n-channel and p-channel MOS transistors, fabricated with a radiation hardened 3-4 um process, were irradiated at various operating frequencies and biases. The n-channel devices showed a larger rebound effect when alternately biased 'off' and 'on' during irradiation than for the cases of being biased either 'off' or 'on' during the irradiation. The p-channel devices showed a smaller threshold voltage shift when alternately biased 'off' and 'on' during irradiation compared to devices which were biased either 'off' or 'on' during the irradiation. The contributions of trapped holes and interface states on the observed threshold voltage shifts were determined through subthreshold current measurements. This research showed the source of this alternating bias effect on the radiation response of MOS devices to be reduced hole trapping and increased interface state buildup in n-channel MOS devices. In p-channel devices, reduced hole trapping is the primary source of this effect.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3982
Ending Page	3987
Page Count	6
File Size	1167313
File Format	PDF
ISSN	00189499
Volume Number	32
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency Interface states MOS devices Threshold voltage MOSFETs Annealing Electron traps Ionizing radiation Laboratories Bonding
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Irradiated Silicon Gate MOS Device Bias Annealing

Spatial and spectral oxide trap distributions in power MOSFETs

Radiation-Induced Interface-State Generation in MOS Devices

The nature of the trapped hole annealing process

Donor/acceptor nature of radiation-induced interface traps

Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases

AC-bias annealing effects on radiation-induced interface traps (MOS transistors)

Radiation Hardness on Submicron NMOS

Radiation Hardness on Submicron NMOS

The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices

Similar Documents

Irradiated Silicon Gate MOS Device Bias Annealing

Spatial and spectral oxide trap distributions in power MOSFETs

Radiation-Induced Interface-State Generation in MOS Devices

The nature of the trapped hole annealing process

Donor/acceptor nature of radiation-induced interface traps

Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases

AC-bias annealing effects on radiation-induced interface traps (MOS transistors)

Radiation Hardness on Submicron NMOS

Radiation Hardness on Submicron NMOS

The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices