NDLI: Meson Interactions in NMOS and CMOS Static RAMs

Content Provider	IEEE Xplore Digital Library
Author	Dicello, J. F. Schillaci, M. E. McCabe, C. W. Doss, J. D. Paciotti, M. Berardo, P. Dicello, J. F.
Copyright Year	1963
Abstract	Nuclear interactions of heavy particles, such as neutrons, protons, and heavy ions are one of the primary causes of errors in memory chips exposed to radiation in the environment. Pions, the quanta associated with the nuclear force, and muons are produced in large quantities in such reactions and can be responsible for a portion of those errors attributed to primary particles. Pions and muons also are important constituents of cosmic rays at lower elevations. The rate of error induction in 4K static RAMs from high-energy pion and muon beams has been measured at three energies and as a function of depth in plastic. Preliminary data for 16K NMOS and 64K CMOS static RAMs were also obtained. Only two errors were observed from muon beams incident upon 4K chips for 1.4 × 1010 particles/cm2 . In contrast, energetic pion beams produced errors in the same chips at the rate of typically 5 × 10-8 errors per incident particle per cm2 . In the pion beams the rate decreased slowly with decreasing energy until the particles approached the end of their range. In the stopping region, the error rate continued to decrease for positively charged pions but increased about a factor of seven for negatively charged pions. Monte Carlo programs have been run both to simulate the production of pions in the atmosphere as a function of elevation and to simulate the inteactions of pions in the 4K chip.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	4201
Ending Page	4205
Page Count	5
File Size	786129
File Format	PDF
ISSN	00189499
Volume Number	32
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mesons MOS devices Particle beams Atmospheric modeling Neutrons Protons Random access memory Cosmic rays Particle beam measurements Energy measurement
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Single Event Upsets in RAMs Induced by Protons at 4.2 GeV and Protons and Neutrons below 100 MeV

Correlated Proton and Heavy Ion Upset Measurements on IDT Static RAMs

Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation

Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs Using Mono-Energetic Neutron Sources

Soft Errors in Static NMOS RAMs

The Relative Efficiency of Soft-Error Induction in 4K Static RAMS by Muons and Pions

Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation

Single event upset and charge collection measurements using high energy protons and neutrons

Measurements of Dose to Failure versus Dose Rate for CMOS/NMOS Static RAMS

Meson Interactions in NMOS and CMOS Static RAMs

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