NDLI: Problems in Precision Modeling of the MOS Transistor for Analog Applications

Content Provider	IEEE Xplore Digital Library
Author	Tsividis, Y. Masetti, G.
Copyright Year	1982
Abstract	This paper summarizes the inadequacies of present MOSFET models as applied to analog circuit design and, in some cases, proposes solutions. Both efficient models suitable for CAD and more complex models are considered. Problem areas discussed include poor modeling of the moderate inversion region, poor modeling of the surface potential in strong inversion, ambiguous use of "threshold" voltages and poor expressions for them, poor modeling of the drain small-signal conductance, very poor modeling of intrinsic small-signal capacitances, inadequate small-signal equivalent circuit topologies, and poor implementation of known correct ideas in some CAD programs, including the dependence of the effective mobility on the substrate potential, the modeling of thermal noise in the nonsaturation region, and the modeling of ion-implanted devices.
Sponsorship	IEEE Council on Electronic Design Automation IEEE Circuits and Systems Society
Starting Page	72
Ending Page	79
Page Count	8
File Size	1306538
File Format	PDF
ISSN	02780070
Volume Number	3
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1984-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Signal design Predictive models Analog circuits Design automation Threshold voltage Capacitance Equivalent circuits Circuit topology Thermal conductivity
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Electrical and Electronic Engineering Software

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