NDLI: Unifying view of transient responses for determining lifetime and surface recombination velocity in silicon diodes and back-surface-field solar cells, with application to experimental short-circuit-current decay

Content Provider	IEEE Xplore Digital Library
Author	Tae-Won Jung Lindholm, F.A. Neugroschel, A.
Copyright Year	1963
Abstract	Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and the effective surface recombination velocity of the quasi-neutral base of silicon solar cells. The method requires the observation of only a single transient, and is amenable to automation for in-process monitoring in manufacturing. Distinct from many other methods in use, this method, which is called short-circuit current decay, avoids distortion in the observed transient and consequent inaccuracies that arise from the presence of mobile holes and electrons stored in the p-n junction space-charge region at the initial instant of the transient. The second main result consists in a formulation of the relevant boundary-value problems that resembles that used in linear two-port network theory. This formulation enables comparisons to be made among various contending methods for measuring material parameters of p-n junction devices, and enables the option of putting the description in the time domain in the form of an infinite series, although closed-form solutions are also possible. The advantage of an infinite-series formulation is the possibility of identifying dominant relaxation times of the transient, leading thereby to simplified descriptions. By outlining the derivation of open-circuit-voltage decay and junction-current recovery from this two-port formulation, we systematically compare these methods with the short-circuit-current decay method that is emphasized here. Small-signal admittance measurement methods also emerge as special cases of the two-port formulation, as is discussed briefly.
Sponsorship	IEEE Electron Devices Society
Starting Page	588
Ending Page	595
Page Count	8
File Size	915708
File Format	PDF
ISSN	00189383
Volume Number	31
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1984-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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