NDLI: Forming Feedthroughs in Laser-Drilled Holes in Semiconductor Wafers by Double-Sided Sputtering

Content Provider	IEEE Xplore Digital Library
Author	Anthony, T.
Copyright Year	1978
Abstract	Electrical feedthroughs in semiconductor wafers were made by laser drilling an array of holes in a wafer and subsequently depositing a conductor on the walls of the holes by double-sided sputtering and through-hole electroplating. A maximum depth-to-diameter ratio of six for feedthrough holes through semiconductor wafers successfully implanted with a conductor by this method was determined from both experiments and theory. Two factors dictated this limit. First, the sputtered film thickness shows a very sharp decrease with distance down the hole. Second, the critical film thickness required for film coalescence and electrical continuity increases with distance down the hole because the incidence angle of sputtered material becomes more oblique with distance down the hole and increases the tendency of the film to grow as separate islands.
Sponsorship	IEEE Electronic Industries Alliance American Society of Mechanical Engineering (ASME) NBS SAE
Starting Page	171
Ending Page	180
Page Count	10
File Size	1434093
File Format	PDF
ISSN	01486411
Volume Number	5
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1982-03-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor lasers Sputtering Semiconductor laser arrays Drilling Integrated circuit interconnections Semiconductor films Conductors Printed circuits Optical arrays Semiconductor materials
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Engineering Electrical and Electronic Engineering

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