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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gutmann, R.J. Borrego, J.M. |
| Copyright Year | 1963 |
| Abstract | The effects of gamma and neutron irradiation on lownoise, GaAs MESFETs are reviewed, with emphasis on microwave amplifier characterisitics. With gamma irradiation, the amplifier noise figure degrades above 107 rads (Si), without change in signal parameters. With neutron irradiation, amplifier gain and noise figure degrade above 1014 n/cm2. With gamma irradiation, unidentified levels are apparently introduced that respond at microwave frequencies. With neutron irradiation, changes are caused principally by carrier compensation in the graded region between the channel and substrate. Device characterization procedures, experimental results, and degradation mechanisms are discussed. |
| Sponsorship | IEEE Reliability Society |
| Starting Page | 232 |
| Ending Page | 236 |
| Page Count | 5 |
| File Size | 1081109 |
| File Format | |
| ISSN | 00189529 |
| Volume Number | R-29 |
| Issue Number | 3 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1980-08-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Degradation Gallium arsenide MESFETs Noise figure Neutrons Microwave devices Scattering parameters Temperature Microwave measurements Noise measurement Degradation mechanisms Radiation effects |
| Content Type | Text |
| Resource Type | Article |
| Subject | Safety, Risk, Reliability and Quality Electrical and Electronic Engineering |
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