NDLI: A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Luong Mo Dang Konaka, M.
Copyright Year	1963
Abstract	Some new understandings on the triode-like behavior and the "punchthrough mode" operation of a short-channel MOSFET are obtained based on a two-dimensional computer simulation. The drain current of a MOSFET is essentially space-charge-limited, showing a shift from a pentode-like behavior to a triode-like behavior with decreasing (source-drain distance/gate oxide thickness) ratios which serve to manifest the relative modulations by the gate and the drain upon the channel conductivity. In a short-channel MOSFET, the triode-like behavior is more accentuated by a "punchthrough effect" due to a lowering of the potential barrier at the source by the drain field. The current thus resulted includes a gate-uncontrollable component flowing deep in the bulk, which is termed "punchthrough current" to distinguish it from the gate-controllable component characterizing the triode-like behavior. Optimized conditions for a device for reducing the "punch-through current," are also described in detail.
Sponsorship	IEEE Electron Devices Society
Starting Page	1533
Ending Page	1539
Page Count	7
File Size	636149
File Format	PDF
ISSN	00189383
Volume Number	27
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1980-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

MP-A2 Triode-like characteristics of short-channel MOSFET's in punch-through mode operation

A Two-Dimensional Computer Analysis of Triode-Like Characteristics of Short-Channel MOSFET's

Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation

Optimum design of triode-like JFET's by two-dimensional computer simulation

Two-dimensional analysis of triode-like operation of junction gate FET's

Device characteristics of short-channel and narrow-width MOSFET's

Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis

Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region

Two-dimensional analysis of velocity overshoot effects in ultrashort-channel Si MOSFET's

A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFET's

Similar Documents

MP-A2 Triode-like characteristics of short-channel MOSFET's in punch-through mode operation

A Two-Dimensional Computer Analysis of Triode-Like Characteristics of Short-Channel MOSFET's

Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation

Optimum design of triode-like JFET's by two-dimensional computer simulation

Two-dimensional analysis of triode-like operation of junction gate FET's

Device characteristics of short-channel and narrow-width MOSFET's

Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis

Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region

Two-dimensional analysis of velocity overshoot effects in ultrashort-channel Si MOSFET's

A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFET's