NDLI: High efficiency CW transferred-electron oscillator with optimized doping profile

Content Provider	IEEE Xplore Digital Library
Author	Kamei, K. Eastman, L.F.
Copyright Year	1963
Abstract	This study is aimed at helping to design X-band CW transferred-electron oscillators with higher performance. Temperature rise in devices operating in the accumulation layer mode is analyzed both with heat sink negative and heat sink positive. Efficiencies and output powers in both polarities are calculated and compared. The calculation shows efficiency in CW operation is drastically improved by quantitatively controlling the doping profile to account for the temperature profile and further governed by carrier concentration times layer thickness (n × l) product and diode size. For the heat sink negative, output power over 800 mW is predicted from a single-mesa conventional structure, using a wafer with an n × l product of 2.0 × 10¹²cm^-2and doping profile increasing, toward the substrate (away from the heat sink), by 30-35 percent across the active layer. For the heat sink positive, an almost flat profile is suitable and output power over 1.5 W is predicted for a diode with a doping increase of 10 percent across the active layer toward the substrate. The calculations are substantiated experimentally by diodes with n × l products of 1.5-2.3 × 10¹²cm^-2and doping increases of 20-70 percent across the active layer toward the substrate heat sink negative operation.
Sponsorship	IEEE Electron Devices Society
Starting Page	452
Ending Page	459
Page Count	8
File Size	976863
File Format	PDF
ISSN	00189383
Volume Number	23
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1976-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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