NDLI: Optimized numerical models for semiconductor devices: Part II

Content Provider	IEEE Xplore Digital Library
Author	McAfee Jr., L.C.
Copyright Year	1963
Abstract	This article presents some results from a study that was concerned with the trade-off between efficiency of numerical computation and accuracy of numerical models for semiconductor devices. The approach taken in this study was to use optimized nonuniform grids in the finite difference equations approximating the semiconductor partial differential equations. This paper presents a second choice of performance function that allows a minimization of the truncation error made in the difference approximation to the continuous equations. The truncation error approach is more elegant and more useful than the terminal current approach reported in Part I [7]. An example is presented to illustrate the results obtained with the truncation error performance function. A significant side result is that when the truncation error is minimized, then all other desired features are optimized for the numerical models for semiconductor devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	447
Ending Page	452
Page Count	6
File Size	624518
File Format	PDF
ISSN	00189383
Volume Number	23
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1976-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Optimized numerical models for semiconductor devices: Part I

Instantaneous temperature profiles inside semiconductor power devices: Part II

Numerical analysis of heterostructure semiconductor devices

Numerical modeling of magnetic-field-sensitive semiconductor devices

Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs

A new technology for epitaxial II-VI compound semiconductor devices

Instantaneous temperature profiles inside semiconductor power devices: Part I

A novel numerical model for SOI devices

Numerical methods for semiconductor device simulation

Optimized numerical models for semiconductor devices: Part II

Similar Documents

Optimized numerical models for semiconductor devices: Part I

Instantaneous temperature profiles inside semiconductor power devices: Part II

Numerical analysis of heterostructure semiconductor devices

Numerical modeling of magnetic-field-sensitive semiconductor devices

Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs

A new technology for epitaxial II-VI compound semiconductor devices

Instantaneous temperature profiles inside semiconductor power devices: Part I

A novel numerical model for SOI devices

Numerical methods for semiconductor device simulation

Optimized numerical models for semiconductor devices: Part II