NDLI: Advancements at the Lower End: Advances in HF, VHF, and UHF Systems and Technology

Content Provider	IEEE Xplore Digital Library
Author	Caverly, R. Breed, G. Cantrell, W. Eron, M. Garcia, J. Kondrath, N. Myer, D. Ruiz, M. Walker, J.
Copyright Year	2000
Abstract	In the March 2002 issue of IEEE Transactions on Microwave Theory and Techniques (T-MTT), Frederick Raab, chair and founder of the highfrequency (HF), very high frequency (VHF), ultrahigh frequency (UHF) technology technical committee of the IEEE Microwave Theory and Techniques Society (Technical Committee 17), organized an extensive overview paper "HF, VHF, and UHF Systems and Technology" [1]. The paper started with the early-20th-century notion that frequencies above approximately 1.5 MHz (200 m and down) were useless for communications, a fact soon discovered to be incorrect as experimenters and amateur radio enthusiasts showed the utility of the higher frequencies. The paper reviewed HF through UHF communication techniques and technologies, various propagation modes, and a number of systems and applications below 1,000 MHz. There have been many advances in this frequency range in the intervening years, some of them quite striking, as well as new applications and other applications not mentioned in the paper; updating the paper on HF, VHF, and UHF technology is the major focus of this article. In addition to updates on some of the material in the original paper, new technologies and/or a better understanding of electromagnetic (EM) behavior have occurred, and these are included in this article.
Starting Page	28
Ending Page	49
Page Count	22
File Size	7460226
File Format	PDF
ISSN	15273342
Volume Number	16
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride UHF devices Radio frequency HEMTs Magnetic resonance imaging Silicon carbide Power transistors VHF devices
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers

Study of self-heating effects in GaN HEMTs

Comparison between Si-LDMOS and GaN-based microwave power transistors

Advances in Linear Modeling of Microwave Transistors

Advances in III-V transistors (HEMTs and HBTs) for mm-wave applications

AlGaN/GaN-HEMTs for power applications up to 40 GHz

Wide bandgap semiconductor RF power devices

Radiation effects in microwave devices based on Gallium nitride

High-voltage SiC and GaN power devices

Advancements at the Lower End: Advances in HF, VHF, and UHF Systems and Technology

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Advancements at the Lower End: Advances in HF, VHF, and UHF Systems and Technology