NDLI: A Wide-Band CMOS to Waveguide Transition at mm-Wave Frequencies With Wire-Bonds

Content Provider	IEEE Xplore Digital Library
Author	Jameson, S. Socher, E.
Copyright Year	1963
Abstract	In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is investigated. The transition between a coplanar waveguide (CPW) on Duroid to W-band aluminum waveguide is studied and measured results show a bandwidth of 49% (67-110 GHz), an average insertion loss of 0.35 dB, and return loss below -10 dB throughout the entire band. Wire-bonding is then investigated as a connection between on-chip CMOS ground-signal-ground (GSG) pads to the Duroid CPW where the CMOS to printed circuit board transition measured results show an average 1-dB loss (including the CMOS GSG launcher) in the W-band. The full transition is also used to demonstrate packaging of a 100-GHz voltage-controlled oscillator in 90-nm CMOS where the RF signal was transmitted successfully with an average 2.5-dB loss (which includes a 2-cm Duroid CPW line) compared to on-chip probing measurement results.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2741
Ending Page	2750
Page Count	10
File Size	2693272
File Format	PDF
ISSN	00189480
Volume Number	63
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS integrated circuits Waveguide transitions Coplanar waveguides System-on-chip Impedance Bandwidth Antennas wire-bond CMOS coplanar waveguide (CPW) millimeter-wave (mm-wave) package printed circuit board (PCB) transition W-band waveguide
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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