NDLI: Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station

Content Provider	IEEE Xplore Digital Library
Author	Seunghoon Jee Juyeon Lee Junghwan Son Seokhyeon Kim Cheol Ho Kim Junghwan Moon Bumman Kim
Copyright Year	1963
Abstract	A power amplifier (PA) for a femto-cell base station should be highly efficient and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved by designing an asymmetric Doherty power amplifier (DPA). From the simulation result for a long-term evolution (LTE) signal with 7.2-dB PAPR, the DPA delivers the highest efficiency with 1:1.4 cell size ratio for the carrier and peaking PAs. A small size is achieved by designing the DPA using a GaN monolithic microwave integrated circuit process. For broadband operation, we employ a new circuit topology to alleviate the bandwidth limiting factors of the DPA such as a quarter-wavelength transformer, phase compensation network, and offset line. With the design concept, an asymmetric broadband DPA is implemented using a TriQuint 3MI 0.25-μm GaN-HEMT MMIC process. Across 2.1-2.7 GHz, the implemented PA deliver a drain efficiency of over 49%, a gain of over 12.6 dB, and adjacent channel leakage ratio of below -45 dBc at an average power of over 33.1 dBm for the LTE signal. This fully integrated circuit has a chip-size of 2.65 mm×1.9 mm.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2802
Ending Page	2810
Page Count	9
File Size	2891430
File Format	PDF
ISSN	00189480
Volume Number	63
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Broadband communication Impedance Peak to average power ratio MMICs Bandwidth Power generation Gallium nitride monolithic microwave integrated circuit (MMIC) Broadband power amplifier (PA) digital predistortion (DPD) Doherty power amplifier (DPA) gallium–nitride (GaN) long-term evolution (LTE)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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