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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tosi, A. Calandri, N. Sanzaro, M. Acerbi, F. |
| Copyright Year | 1995 |
| Abstract | We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μm active-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant ~ 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature. |
| Sponsorship | IEEE Lasers and Electro-Optics Society |
| Starting Page | 192 |
| Ending Page | 197 |
| Page Count | 6 |
| File Size | 1195778 |
| File Format | |
| ISSN | 1077260X |
| Volume Number | 20 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium phosphide Indium gallium arsenide Photonics Electric fields Zinc Logic gates Temperature measurement timing jitter Dark count rate (DCR) detection efficiency InGaAs/InP near-infrared (NIR) detector photon counting single photon single-photon avalanche diode (SPAD) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering |
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