NDLI: InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing

Content Provider	IEEE Xplore Digital Library
Author	Scarcella, C. Boso, G. Ruggeri, A. Tosi, A.
Copyright Year	1995
Abstract	We demonstrate a single-photon detector based on InGaAs/InP single-photon avalanche diodes (SPADs) sinusoidal-gated at 1.3 GHz with very low afterpulsing (about 1.5%), high dynamic range (maximum count rate is 650 Mcount/s), high photon detection efficiency (>30% at 1550 nm), low noise (per-gate dark count rate is 2.2 × 10^-5), and low timing jitter (<;70 ps full-width at half-maximum). The SPAD is paired with a “dummy” structure that is biased in antiphase. The sinusoidal gating signals are cancelled by means of a common-cathode configuration and by adjusting the relative amplitude and phase of the signals biasing the two arms. This configuration allows us to adjust the gating frequency from 1 to 1.4 GHz and can be operated also in the so-called gate-free mode, with the gate sine-wave unlocked with respect to the light stimulus, resulting in a free-running equivalent operation of the InGaAs/InP SPAD with about 4% average photon detection efficiency at 1550 nm.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	17
Ending Page	22
Page Count	6
File Size	1825090
File Format	PDF
ISSN	1077260X
Volume Number	21
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Detectors Photonics Indium gallium arsenide Indium phosphide Harmonic analysis Power harmonic filters photon counting Photodetectors Single-Photon Avalanche Diodes avalanche photodiode single-photon avalanche diodes (SPADs) near-infrared detector
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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Low-Timing-Jitter Single-Photon Detection Using 1-GHz Sinusoidally Gated InGaAs/InP Avalanche Photodiode

Dark Count Rate Dependence on Bias Voltage During Gate-OFF in InGaAs/InP Single-Photon Avalanche Diodes

InGaAs/InP Single-Photon Avalanche Diode With Reduced Afterpulsing and Sharp Timing Response With 30 ps Tail

Charge Persistence in InGaAs/InP Single-Photon Avalanche Diodes

Integrated Circuit for Subnanosecond Gating of InGaAs/InP SPAD

Room-Temperature Single-Photon Detector Based on InGaAs/InP Avalanche Photodiode With Multichannel Counting Ability

Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode

Comment: Near room temperature 1.3 μm single photon counting with an InGaAs avalanche photodiode

Reply: Near room temperature 1.3 μm single photon counting with an InGaAs avalanche photodiode

InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing

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InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing