NDLI: Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes

Content Provider	IEEE Xplore Digital Library
Author	Rui Huang Zewen Lin Zhenxu Lin Chao Song Xiang Wang Yanqing Guo Jie Song
Copyright Year	1995
Abstract	We present an effective method to suppress the hole overflow in Si quantum dots-based silicon nitride (SiN) light-emitting diodes (LEDs) by employing nanocrystalline Si (nc-Si) layer as hole blocking layer inserted between the SiN luminescent active layer and p-Si anode. The proposed devices exhibit strong white light emission under forward bias conditions. In comparison to the LEDs without nc-Si interlayer, a significant enhancement of more than 200% in light emission efficiency is achieved from the proposed devices. The increment in EL efficiency is found to strongly depend on the thickness of nc-Si interlayer. Besides, the proposed devices show a low turn-on voltage of 6 V, which is the same as that of the device without nc-Si interlayer. The analysis of the dominant recombination process indicates that the improved emission efficiency is resulting from the increased bimolecular radiative recombination probability, which is attributed to the effective hole-blocking effect of nc-Si barrier that mitigates the unbalance injections between electrons and holes in the SiN active layer by suppressing hole overflow.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	212
Ending Page	217
Page Count	6
File Size	558427
File Format	PDF
ISSN	1077260X
Volume Number	20
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Light emitting diodes Radiative recombination Silicon compounds Quantum dots Electroluminescence Current density Si quantum dots Electroluminescence (EL) silicon nitride
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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