NDLI: Modeling of III-Nitride Multiple-Quantum-Well Light-Emitting Structures

Content Provider	IEEE Xplore Digital Library
Author	Kisin, M.V. El-Ghoroury, H.S.
Copyright Year	1995
Abstract	Spatial inhomogeneity of carrier injection across the multiple-quantum-well (MQW) active region of a semiconductor light emitter can impose severe limitations on the device efficiency. In III-nitride-based devices, the large disparity of electron and hole transport and the excessive depth of active QWs trigger the process of inhomogeneous QW injection which is further aggravated by strong dependence of QW radiative characteristics on the QW injection conditions due to 1) intra-QW screening of polarization fields in polar and semipolar materials, 2) phase-space filling effect in lowest QW subbands at higher levels of carrier injection, and 3) exceedingly nonequilibrium character of the electron and hole populations in deep QWs. All these tendencies become more pronounced in longer wavelength emitters. The residual QW charges provide strong feedback to the QW injection conditions, thus requiring a high level of self-consistency between the active region transport simulation and the QW emission modeling.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1
Ending Page	10
Page Count	10
File Size	1185769
File Format	PDF
ISSN	1077260X
Volume Number	19
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sociology Statistics Mathematical model Quantum well devices Charge carrier processes Optical polarization Spontaneous emission semiconductor device modeling Light-emitting diodes numerical simulation quantum wells
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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