NDLI: Dual-State Absorber-Photocurrent Characteristics and Bistability of Two-Section Quantum-Dot Lasers

Content Provider	IEEE Xplore Digital Library
Author	Breuer, S. Rossetti, M. Drzewietzki, L. Montrosset, I. Krakowski, M. Hopkinson, M. Elsasser, W.
Copyright Year	1995
Abstract	The peculiar behavior of the absorber photocurrent of two-section quantum-dot lasers with different gain-bandwidth chirping is studied numerically and by experiments. By biasing the absorber section of a strongly chirped laser with a self-generated positive voltage or with a reverse-bias, different emission-state lasing regimes also involving a smooth emission-state-transition from quantum-dot ground-state to excited state via simultaneous ground- and excited-state are observed. The gradual emission state and photocurrent transitions are simulated and are in excellent agreement with experiments. In contrast, in a medium-chirped laser a photocurrent and emission-state bistability with hysteresis is experimentally observed involving a transition from sole ground state to sole excited state. Thereby, no intermediate simultaneous dual-state emission regimes occur suggesting the exclusion of simultaneous dual-state emission and bistability. This peculiar bistable behavior is explained qualitatively and offers the potential to be exploited toward switching applications.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1
Ending Page	9
Page Count	9
File Size	844324
File Format	PDF
ISSN	1077260X
Volume Number	19
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	semiconductor lasers Quantum dots semiconductor device modeling
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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