NDLI: A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Content Provider	IEEE Xplore Digital Library
Author	Pengelly, R.S. Wood, S.M. Milligan, J.W. Sheppard, S.T. Pribble, W.L.
Copyright Year	1963
Abstract	Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled with high breakdown voltages, have opened up the possibilities for highly efficient power amplifiers (PAs) exploiting the principles of waveform engineered designs. This paper summarizes the unique advantages of GaN HEMTs compared to other power transistor technologies, with examples of where such features have been exploited. Since RF power densities of GaN HEMTs are many times higher than other technologies, much attention has also been given to thermal management-examples of both commercial “off-the-shelf” packaging as well as custom heat-sinks are described. The very desirable feature of having accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are emphasized with a number of circuit design examples. GaN HEMT technology has been a major enabler for both very broadband high-PAs and very high-efficiency designs. This paper describes examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, Class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1764
Ending Page	1783
Page Count	20
File Size	3892446
File Format	PDF
ISSN	00189480
Volume Number	60
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride HEMTs Logic gates Integrated circuit modeling MMICs Load modeling silicon carbide Broadband gallium nitride (GaN) high efficiency monolithic microwave integrated circuit (MMIC) power amplifier (PAs) power transistor
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

S3-P3: Advanced no-field-plate AlGaN/GaN hemts for millimeter-wave MMIC applications

Ka-band GaN power amplifier MMIC chipset for satellite and 5G cellular communications

GaN-based millimeter-wave monolithic integrated circuits

Two-stage quasi-class-E power amplifier in GaN HEMT technology

A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

AlGaN/GaN $Ka$-Band 5-W MMIC Amplifier

Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications

Wideband power amplifier MMICs utilizing GaN on SiC

Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Similar Documents

S3-P3: Advanced no-field-plate AlGaN/GaN hemts for millimeter-wave MMIC applications

Ka-band GaN power amplifier MMIC chipset for satellite and 5G cellular communications

GaN-based millimeter-wave monolithic integrated circuits

Two-stage quasi-class-E power amplifier in GaN HEMT technology

A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

AlGaN/GaN $Ka$-Band 5-W MMIC Amplifier

Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications

Wideband power amplifier MMICs utilizing GaN on SiC

Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs