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High-performance field effect transistors with self-assembled nanodielectrics
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2009 |
| Description | Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication. |
| File Size | 1166161 |
| Page Count | 17 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20100006888 |
| Archival Resource Key | ark:/13960/t70w3g49r |
| Language | English |
| Publisher Date | 2009-12-15 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Fabrication Patents Dielectrics Field Effect Transistors Flexibility Nanotechnology Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
