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Two-dimensional quantum model of a nanotransistor
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Svizhenko, A. Anantram, M. P. Biegel, B. Govindan, T. R. |
| Copyright Year | 2009 |
| Description | A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models. |
| File Size | 219721 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20090020575 |
| Archival Resource Key | ark:/13960/t45q9wz1w |
| Language | English |
| Publisher Date | 2009-05-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Gates Circuits Leakage Green's Functions Electric Charge Field Effect Transistors Two Dimensional Models Quantum Electronics Numerical Analysis Metal Oxide Semiconductors Threshold Voltage Transistors Nanotechnology Software Engineering Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
