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Influence of scattering on ballistic nanotransistor design
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Anantram, M. P. Svizhenko, Alexei |
| Copyright Year | 2002 |
| Description | Importance of this work: (1) This is the first work to model electron-phonon scattering within a quantum mechanical approach to nanotransistors. The simulations use the non equilibrium Green's function method. (2) A simple equation which captures the importance of scattering as a function of the spatial location from source to drain is presented. This equation helps interpret the numerical simulations. (3) We show that the resistance per unit length in the source side is much larger than in the drain side. Thus making scattering in the source side of the device much more important than scattering in the drain side. Numerical estimates of ballisticity for 10nm channel length devices in the presence of of electron-phonon scattering are given. Based on these calculations, we propose that to achieve a larger on-current in nanotransistors, it is crucial to keep the highly doped source extension region extremely small, even if this is at the cost of making the highly doped drain extension region longer. |
| File Size | 192424 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20020067715 |
| Archival Resource Key | ark:/13960/t8tb62m02 |
| Language | English |
| Publisher Date | 2002-06-03 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Electron Scattering Green's Functions Doped Crystals Direct Numerical Simulation Mathematical Models Transistors Design Analysis Nanotechnology Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
