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Methods for forming group iii-arsenide-nitride semiconductor materials
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2002 |
| Description | Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired. |
| File Size | 1632809 |
| Page Count | 21 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080005028 |
| Archival Resource Key | ark:/13960/t0tr0vn2n |
| Language | English |
| Publisher Date | 2002-01-29 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Nitrides Patents Semiconductors Materials Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
