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Method for growing low-defect single crystal heteroepitaxial films
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2002 |
| Description | A method is disclosed for growing high-quality low-defect crystal films heteroepitaxially on substrates that are different than the crystal films. The growth of the first two heteroepitaxial bilayers is performed on a first two-dimensional nucleate island before a second growth of two-dimensional nucleation is allowed to start. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, or 2H-GaN on 6H-SiC, 4H-SiC, or silicon substrates. |
| File Size | 3128474 |
| Page Count | 56 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20030014584 |
| Archival Resource Key | ark:/13960/t4fn6496b |
| Language | English |
| Publisher Date | 2002-12-03 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Thin Films Crystal Growth Patents Aluminum Nitrides Semiconductor Devices Gallium Nitrides Silicon Carbides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
