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High-field fast-risetime pulse failures in 4h- and 6h-sic pn junction diodes
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Neudeck, Philip G. Fazi, Christian |
| Copyright Year | 1996 |
| Description | We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices. |
| File Size | 715431 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19970022944 |
| Archival Resource Key | ark:/13960/t1vf1rv7c |
| Language | English |
| Publisher Date | 1996-07-15 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Leakage Electric Potential Doped Crystals Silicon Carbides Silicon Junction Diodes Reliability Pulses Electrical Faults Failure P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
