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Fast risetime reverse bias pulse failures in sic pn junction diodes
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Neudeck, Philip G. Parsons, James D. Fazi, Christian |
| Copyright Year | 1996 |
| Description | SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures. |
| File Size | 589424 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19960047115 |
| Archival Resource Key | ark:/13960/t8x974q5m |
| Language | English |
| Publisher Date | 1996-07-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Doped Crystals Semiconductors Materials Bias Silicon Carbides Silicon Controlled Rectifiers Energy Gaps Solid State High Temperature Environments Reliability P-n Junctions Operating Temperature Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
