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Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers (Document No: 19930008224)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1992 |
| Description | A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer. |
| File Size | 975652 |
| Page Count | 24 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19930008224 |
| Archival Resource Key | ark:/13960/t1pg6kt9h |
| Language | English |
| Publisher Date | 1992-11-09 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Single Crystals Semiconducting Films Semiconductor Devices Wafers Silicon Carbides Crystal Structure Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |