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Hydrogen-silicon carbide interactions
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Misra, Ajay K. Eckel, Andrew J. Humphrey, Donald L. Jacobson, Nathan S. |
| Copyright Year | 1989 |
| Description | A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamic maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of Region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicon carbide is the single stable solid phase in Region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4, and SiH. Analysis of the kinetics of reaction for Region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to Regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer. |
| File Size | 571406 |
| Page Count | 14 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19900001828 |
| Archival Resource Key | ark:/13960/t9p31sf1q |
| Language | English |
| Publisher Date | 1989-09-01 |
| Access Restriction | Open |
| Subject Keyword | Nonmetallic Materials Pressure Dependence Oxygen Thermochemistry Moisture Content Hydrogen Reaction Kinetics Silicon Carbides Oxidation High Temperature Environments Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
