Loading...
Please wait, while we are loading the content...
Similar Documents
Microwave performance of an optically controlled algaas/gaas high electron mobility transistor and gaas mesfet
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Simons, Rainee N. Bhasin, Kul B. |
| Copyright Year | 1987 |
| Description | Direct current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.89 dB under 1.7 nW/sq cm optical intensity at 0.83 microns. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high speed high frequency photo detector, and mixer are demonstrated. |
| File Size | 441525 |
| Page Count | 11 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870008560 |
| Archival Resource Key | ark:/13960/t1jh8fh9p |
| Language | English |
| Publisher Date | 1987-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Aluminum Gallium Arsenides Gallium Arsenides Light Emission Semiconductor Devices Field Effect Transistors Direct Current Control Equipment Optical Equipment High Electron Mobility Transistors Microwaves Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
