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Optically controlled gaas dual-gate mesfet and permeable base transistors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Bhasin, K. B. Simons, R. N. |
| Copyright Year | 1986 |
| Description | Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated. |
| File Size | 261697 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870000799 |
| Archival Resource Key | ark:/13960/t5t77911b |
| Language | English |
| Publisher Date | 1986-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Gates Circuits Integrated Circuits Gallium Arsenides Field Effect Transistors Microwave Equipment Optical Switching Laser Cavities Optical Equipment Permeability Fiber Optics Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
