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Development of a radiation-hard cmos process
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Power, W. L. |
| Copyright Year | 1983 |
| Description | It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth. |
| File Size | 1865490 |
| Page Count | 25 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860003719 |
| Archival Resource Key | ark:/13960/t4vj0cj97 |
| Language | English |
| Publisher Date | 1983-08-04 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Radiation Hardening Cleanliness Chlorine Hydrogen Growth Pollution Control Oxides Contamination Cmos Long Duration Space Flight Degradation Metal Oxide Semiconductors Sodium Ionization Radiation Tolerance Drying Low Temperature Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
