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Process research of polycrystalline silicon material (propsm)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Culik, J. S. |
| Copyright Year | 1984 |
| Description | An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects. |
| File Size | 762172 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19840025962 |
| Archival Resource Key | ark:/13960/t8jd9q39w |
| Language | English |
| Publisher Date | 1984-06-30 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Annealing Crystal Defects Electrical Properties Polycrystals Photodiodes Hydrogenation Passivity Fabrication Semiconductors Materials Sintering Silicon Current Density Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
