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Process research on polycrystalline silicon material (propsm) (Document No: 19840020145)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Culik, J. S. Wohlgemuth, J. H. |
| Copyright Year | 1982 |
| Description | Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated. |
| File Size | 1615957 |
| Page Count | 41 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19840020145 |
| Archival Resource Key | ark:/13960/t22c3v46x |
| Language | English |
| Publisher Date | 1982-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Fabrication Thickness Single Crystals Electrical Properties Electrical Resistivity Wafers Polycrystals Etching Data Correlation Open Circuit Voltage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
