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Advanced indium antimonide monolithic charge coupled infrared imaging arrays
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Koch, T. L. Thom, R. D. Merilainen, C. A. |
| Copyright Year | 1981 |
| Description | The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials. |
| File Size | 2802562 |
| Page Count | 70 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820005483 |
| Archival Resource Key | ark:/13960/t6f23s83v |
| Language | English |
| Publisher Date | 1981-11-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Charge Coupled Devices Integrated Circuits Liquid Phase Epitaxy Vapor Deposition Indium Antimonides Imaging Techniques Insulators Silicon Dioxide Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
