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High-current, fast-switching transistor development
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hower, P. L. |
| Copyright Year | 1981 |
| Description | The design, wafer-processing techniques, and various measurements which include forward safe operating area, dc characteristics, and switching times are described for a larger-diameter (33) transistor. An improved base contact for equalizing the base-emitter voltage at high currents was developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design. |
| File Size | 3189542 |
| Page Count | 48 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810019815 |
| Archival Resource Key | ark:/13960/t0wq4sk36 |
| Language | English |
| Publisher Date | 1981-03-15 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Electrical Properties Metallizing Contact Resistance Optimization Switching Circuits Fabrication Direct Current High Current Wafers Safety Factors Current Distribution Emitters Transistors Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
