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Development and fabrication of a solar cell junction processing system (Document No: 19800015282)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Halvason, W. |
| Copyright Year | 1980 |
| Description | Experiments were completed which indicate that single-pulse, liquid-phase epitaxial regrowth is the optimum technique for pulsed electron beam annealing of ion implantation damage in silicon wafers. An electron beam which covers the entire area of the wafer was chosen for the solar cell processor. Beam control experiments to improve beam propagation and to test the concept of partial space charge and current neutralization were initiated. The electrical parameters of the pulsed electron beam subsystem were chosen on the basis of computer calculations and past experience in pulsed electron accelerator design and operation. The pulser, designated SPI-PULSE 7000, is designed to anneal 10 cm diameter silicon wafers at a rate of 30 per minute. The preliminary design of the major elements of the SPI-PULSE 7000 was completed, and the detailed design of many of the components begun. These elements include a capacitive energy store and charging system, an electron accelerator, a beam control system, a wafer handling system and pressure and vacuum assemblies. |
| File Size | 1132131 |
| Page Count | 20 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19800015282 |
| Archival Resource Key | ark:/13960/t3zs7jn4z |
| Language | English |
| Publisher Date | 1980-04-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Annealing Ion Implantation Solar Arrays Electron Beams Pulsed Radiation Systems Engineering Wafers Production Engineering Epitaxy Low Cost Semiconductor Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
