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Chemical vapor deposition growth (Document No: 19760020296)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Ruth, R. P. Manasevit, H. M. Yang, J. J. Moudy, L. A. Kenty, J. L. Simpson, W. I. |
| Copyright Year | 1976 |
| Description | A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature. |
| File Size | 10012396 |
| Page Count | 76 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19760020296 |
| Archival Resource Key | ark:/13960/t5s805568 |
| Language | English |
| Publisher Date | 1976-03-31 |
| Access Restriction | Open |
| Subject Keyword | Inorganic And Physical Chemistry Solar Cells Pyrolysis Scanning Electron Microscopy Vapor Deposition Glass Cost Reduction Silicon Ceramics Radio Frequency Heating Substrates Aluminum Oxides Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |