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Silicon ribbon growth by a capillary action shaping technique
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kran, A. Ciszek, T. F. Schwuttke, G. H. |
| Copyright Year | 1976 |
| Description | The crystal growth method described is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. A capillary die is so designed that the bounding edges of the die top are not parallel or concentric with the growing ribbon. The new dies allow a higher melt meniscus with concomitant improvements in surface smoothness and freedom from SiC surface particles, which can degrade perfection. |
| File Size | 11186916 |
| Page Count | 75 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19770012955 |
| Archival Resource Key | ark:/13960/t56f0n38k |
| Language | English |
| Publisher Date | 1976-06-15 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Ribbons Solar Arrays Dies Graphite Capillary Flow Silicon Energy Policy Menisci Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
