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Thick film silicon growth techniques
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Jewett, D. N. Mlavsky, A. I. Bates, H. E. White, V. E. |
| Copyright Year | 1974 |
| Description | One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time. |
| File Size | 495627 |
| Page Count | 22 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19740022097 |
| Archival Resource Key | ark:/13960/t8jd9n66z |
| Language | English |
| Publisher Date | 1974-02-28 |
| Access Restriction | Open |
| Subject Keyword | Physics, Solid-state Solar Cells Semiconducting Films Dies Growth Production Engineering Graphite Thick Films Silicon Films Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
