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Analysis of epitaxial drift field n on p silicon solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Baraona, C. R. Brandhorst Jr., H. W. |
| Copyright Year | 1976 |
| Description | The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm. |
| File Size | 2683709 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19770005580 |
| Archival Resource Key | ark:/13960/t3033n052 |
| Language | English |
| Publisher Date | 1976-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Silicon Electrical Properties Epitaxy Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
