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Enhanced crystallinity of low temperature deposited silicon films on graphite subtrates
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Chang, C. A. |
| Copyright Year | 1975 |
| Description | The previously developed technique of a sandwich coating for silicon crystallinity enhancement in silicon films deposited at low temperature is applied to graphite substrates. The measured increase in silicon crystallinity is comparable to that observed earlier using a quartz substrate. The distribution of aluminum in the silicon films is determined using Auger spectroscopic depth profiling. Carbon diffusion from the substrate into the silicon film is shown to be negligible at a substrate temperature of 600 C. |
| File Size | 652774 |
| Page Count | 22 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19760005416 |
| Archival Resource Key | ark:/13960/t3nw47p2t |
| Language | English |
| Publisher Date | 1975-07-25 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Thin Films Solar Cells Production Engineering Graphite Silicon Substrates Vacuum Deposition Crystal Structure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
