Loading...
Please wait, while we are loading the content...
Similar Documents
Effects of radiation on charge-coupled devices
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Carnes, J. E. Schlesier, K. M. Cope, A. D. Rockett, L. R. |
| Copyright Year | 1975 |
| Description | The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used. |
| File Size | 1267145 |
| Page Count | 9 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19750020771 |
| Archival Resource Key | ark:/13960/t9x10w214 |
| Language | English |
| Publisher Date | 1975-06-10 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Charge Coupled Devices Radiation Effects Photosensitivity Metal Oxide Semiconductors Electron Irradiation Aluminum Silicon Threshold Voltage Imagery Charge Transfer Arrays Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
