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Effects of ionizing radiation on ccd's
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hartsell, G. A. Collins, D. R. Robinson, D. A. |
| Copyright Year | 1975 |
| Description | The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported. |
| File Size | 2179981 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19750020769 |
| Archival Resource Key | ark:/13960/t6c29p55w |
| Language | English |
| Publisher Date | 1975-06-10 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Charge Coupled Devices Radiation Effects Photosensitivity Ionizing Radiation Metal Oxide Semiconductors Threshold Voltage Photoelectricity Imagery Charge Transfer Silicon Dioxide Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
