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Investigation of chemical vapor deposition of garnet films for bubble domain memories
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Besser, P. J. Hamilton, T. N. |
| Copyright Year | 1973 |
| Description | The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG. |
| File Size | 34135015 |
| Page Count | 99 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19730024350 |
| Archival Resource Key | ark:/13960/t3mw76h1h |
| Language | English |
| Publisher Date | 1973-10-01 |
| Access Restriction | Open |
| Subject Keyword | Chemistry Thin Films Ferrimagnetic Materials Crystal Growth Vapor Deposition Garnets Halides Chemical Composition Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
