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Development of gallium arsenide solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1973 |
| Description | The potential of ion implantation as a means of developing gallium arsenide solar cells with high efficiency performance was investigated. Computer calculations on gallium arsenide cell characteristics are presented to show the effects of surface recombination, junction space-charge recombination, and built-in fields produced by nonuniform doping of the surface region. The fabrication technology is summarized. Electrical and optical measurements on samples of solar cells are included. |
| File Size | 1933052 |
| Page Count | 44 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19730022245 |
| Archival Resource Key | ark:/13960/t6450fp6n |
| Language | English |
| Publisher Date | 1973-02-01 |
| Access Restriction | Open |
| Subject Keyword | Auxiliary Systems Solar Cells Equipment Specifications Gallium Arsenides Electrical Properties Optical Properties Energy Conversion Ion Recombination Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |