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A study of beryllium and beryllium-lithium complexes in single crystal silicon
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Gilmer Jr., T. E. Robertson, J. B. Crouch, R. K. |
| Copyright Year | 1972 |
| Description | When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191-MeV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two acceptor levels at 106 MeV and 81 MeV. Quenching and annealing studies indicate that these levels are due to lithium forming a complex with the defects responsible for the 191-MeV and 145-MeV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-MeV beryllium level is split into two levels, presumably by internal strains. Tentative models are proposed. |
| File Size | 1556856 |
| Page Count | 34 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19730005009 |
| Archival Resource Key | ark:/13960/t48q0sc3h |
| Language | English |
| Publisher Date | 1972-12-01 |
| Access Restriction | Open |
| Subject Keyword | Physics, Solid-state Quenching Cooling Single Crystals Annealing Silicon Lithium Compounds Beryllium Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
