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Gate protective device for sos array
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Meyer Jr., J. E. Scott, J. H. |
| Copyright Year | 1972 |
| Description | Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown. |
| File Size | 96935 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19720000754 |
| Archival Resource Key | ark:/13960/t9n34mh6s |
| Language | English |
| Publisher Date | 1972-12-01 |
| Access Restriction | Open |
| Subject Keyword | Electronic Components And Circuits Additives Metal Oxide Semiconductors Electrical Properties Human Body Sapphire Silicon Oxides Epitaxy Electric Discharges N-p-n Junctions Electrical Faults Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |