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Effect of 40-mev protons on semiconductors as determined with an improved method of measuring diffusion length of minority carriers
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1965 |
| Description | Radiation induced changes in semiconductor materials from 40 MeV proton radiation determined by improved infrared method |
| File Size | 6128165 |
| Page Count | 21 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19650016810 |
| Archival Resource Key | ark:/13960/t2c871j8m |
| Language | English |
| Publisher Date | 1965-06-01 |
| Access Restriction | Open |
| Subject Keyword | Irradiation Semiconductor Device Radiation Effect Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |