NDLI: Performance of high resistivity n+pp+ silicon solar cells under 1 mev electron irradiation

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Performance of high resistivity n+pp+ silicon solar cells under 1 mev electron irradiation

Content Provider	NASA Technical Reports Server (NTRS)
Author	Weinberg, I. Hermann, A. M. Swartz, C. K. Goradia, C.
Copyright Year	1981
Description	High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.
File Size	957462
Page Count	12
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19810015092
Archival Resource Key	ark:/13960/t0rr6nz59
Language	English
Publisher Date	1981-01-01
Access Restriction	Open
Subject Keyword	Energy Production And Conversion Solar Cells Electron Irradiation Electrical Resistivity Fluence Performance Prediction Radiation Tolerance Carrier Injection Majority Carriers Minority Carriers Diffusion Open Circuit Voltage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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