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Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires
| Content Provider | Hyper Articles en Ligne (HAL) |
|---|---|
| Author | Anufriev, Roman Chauvin, Nicolas Barakat, Jean-Baptiste Khmissi, Hammadi Naji, Khalid Patriarche, Gilles Letartre, Xavier Gendry, Michel BRU-CHEVALLIER, Catherine |
| Abstract | Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 µm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod. |
| File Format | |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | spi Engineering Sciences [physics] Micro and nanotechnologies Microelectronics |
| Content Type | Text |
| Resource Type | Article |